Typical Characteristics
10
V GS = 4.5V
3.0V
1.6
8
6
3.5V
2.5V
1.4
1.2
V GS = 2.5V
3.0V
4
2.0V
3.5V
4.0V
2
0
1.5V
1
0.8
4.5V
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
1.6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
0.24
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.4
I D = 2.7A
V GS = 4.5V
0.2
I D = 1.4A
0.16
1.2
1
0.12
0.08
T A = 125 o C
0.8
0.04
T A = 25 o C
0.6
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation
with Temperature.
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
25 C
10
V DS = 5V
T A = -55 o C
o
10
V GS = 0V
125 C
T A = 125 C
25 C
8
6
o
1
0.1
o
o
-55 C
4
2
0
0.01
0.001
0.0001
o
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6305N, Rev. C
相关PDF资料
FDC6306P MOSFET P-CHAN DUAL 20V SSOT6
FDC6310P MOSFET P-CH DUAL 20V SSOT-6
FDC6312P MOSFET P-CH DUAL 20V SSOT-6
FDC6318P MOSFET P-CH DUAL 12V SSOT-6
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FDC6327C MOSFET N/P-CH DUAL 20V SSOT-6
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相关代理商/技术参数
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